Presentation Information
[15p-PB1-18]Fabrication and characterization of helimagnetic MnAu2(001) epitaxial thin films
〇(M1)Masaki Ishida1,2, Shoya Sakamoto2,3, Keita Ito2, Takeshi Seki2,3,4 (1.Grad. Sch. Eng., Tohoku Univ., 2.IMR, Tohoku Univ., 3.CSIS, Tohoku Univ., 4.SRIS, Tohoku Univ.)
Keywords:
Helimagnet,Thin film
In magnetic random-access memory (MRAM), interference of stray magnetic fields from ferromagnetic layers with neighboring devices, hinders high-density integration. Helimagnets, in which local magnetic moments gradually rotate around a helical axis and generate no stray magnetic fields, could use the handedness of helix, chirality as an information carrier. In a previous study, MnAu2(110) epitaxial thin films with an in-plane helical axis were prepared, and its chirality was controlled and detected. For the high-density memory devices, multilayer structures with an out-of-plane helical axis are desirable. In this study, we explored the growth of MnAu2(001) epitaxial thin films with an out-of-plane helical axis by changing the growth conditions and investigated their crystallinity. 100-nm-thick MnAu2 prepared at 400 ℃ on MgO(001) substrate with a 100-nm-thick Ta underlayer exhibits strong MnAu2(001)- and (110)-related peaks. The MnAu2(001) orientation is estimated to be ~80%.