Presentation Information
[15p-PB1-45]Comparative study on the tunnel magnetoresistance-based magnetic anisotropy measurement for a perpendicular magnetic tunnel junction
〇(P)Kresna Bondan Fathoni1, Thomas Scheike1, Zhenchao Wen1, Seiji Mitani1,2, Hiroaki Sukegawa1 (1.NIMS, 2.Univ. of Tsukuba)
Keywords:
perpendicular magnetic anisotropy,tunnel magnetoresistance,magnetic tunnel junction
Perpendicular magnetic anisotropy (PMA) governs both magnetization switching and thermal stability in magnetic layers. It is strongly influenced by electronic states at the interface of a magnetic layer, film roughness, and device geometry. Microfabrication processes can modify the magnetic properties due to the changes in shape anisotropy, stress in a film, or process-induced damage. Therefore, characterizing PMA properties solely at the blanket-film level may lead to over- or underestimation as device dimensions shrink to the nanoscale. In this study, we compare two techniques for evaluating PMA using an orthogonal magnetic tunnel junction (MTJ) stack deposited using ultra-high vacuum magnetron sputtering.The first technique uses a superconducting quantum interference device-vibrating sample magnetometer to directly measure the magnetic moment of mm-area films. The second technique uses the tunnel magnetoresistance effect to indirectly estimate the PMA on a micrometer area MTJ.