Presentation Information
[15p-PB1-56]Te composition dependence of superconducting diode effect in FeSe1−xTex/FeTe heterostructure devices
〇(M2)Kenshin Inamura1, Yusuke Kobayashi1, Kaito Arizono1, Junichi Shiogai1,2, Tsutomu Nojima3, Jobu Matsuno1,2 (1.Dept. Phys., Univ. Osaka, 2.OTRI-spin, Univ. Osaka, 3.IMR, Tohoku Univ.)
Keywords:
superconducting diode effect
Fe(Se,Te) is a superconductor characterized by strong spin-orbit interaction and high superconducting critical parameters. In thin-film heterostructures, it exhibits the superconducting diode effect. In this study, we evaluated the superconducting diode characteristics of FeSe1-xTex/FeTe (x = 0.5, 0.6, 0.7) thin-film devices and found that both the superconducting critical current density and the rectification efficiency are maximized at x = 0.6.