[15p-S4_201-1~12] 3.14 Optics and Photonics English Session

2:30 PM - 2:45 PM JST(5:30 AM - 5:45 AM UTC)English Presentation

[15p-S4_201-3] Comparing the Fluorescence Properties of Single-Photon Emitter Characteristics Generated by Carbon-Based Processes and Ion Implantation.

〇(D)Shih posheng^1,3, Chia-Hung Wu², Kuo-Ping Chen¹, Satoshi Ishii^3,4 (1.Institute of Photonics Technologies, National Tsing Hua University, 2.Institute of Lighting and Energy Photonics, National Yang Ming Chiao Tung University, 3.Research Center for Materials Nano architectonics (MANA), National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan, 4.Subprogram in Materials Science and Engineering, Graduate School of Science and Technology, University of Tsukuba, Tsukuba, Ibaraki 305-8577, Japan)

Keywords:

single photon emitter,ion implantation,high temperture annealing

To leverage the characteristics of ion beam implantation and carbon induced single photon emitter, in this paper, we compare two methods for generating single-photon emitters by analyzing and contrasting their optical characteristics.