[16a-M_107-1~10] 13.6 Nanostructures, quantum phenomena, and nano quantum devices

10:00 AM - 10:15 AM JST(1:00 AM - 1:15 AM UTC)

[16a-M_107-3] THz Field Sensors Using EO Effect in a Semiconductor Triple-Coupled Microcavity

〇Takahiro Kitada¹, Haku Okamtoto¹, Yukihiro Harada², Toshiyuki Kaizu³, Osamu Kojima⁴, Takashi Kita², Osamu Wada⁵ (1.NIT of Matsue, 2.Grad. Sch. of Eng., Kobe Univ., 3.UEC, 4.Chiba Inst. Tech., 5.Kobe Univ.)

Keywords:

coupled optical microcavity,electro-optic effect,terahertz sensing

We have proposed terahertz (THz) field sensors using electro-optic (EO) effect in a GaAs-based triple-coupled microcavity composed of three cavity layers and four distributed Bragg reflectors (DBRs). The infrared probe light is injected into the sensor for the detection of the phase-shift signal due to birefringence arising from EO effect induced by the THz field irradiation. A strong phase-shift signal can be obtained when the cavity modes coincident with the upper and lower sidebands caused by the EO effect. We also found that the sign inversion of the EO coefficient in the middle of the structure is effective for the further enhancement of the phase-shift signal. In this presentation, we will discuss the detailed properties of the THz field detection.