[16a-M_B07-1~9] 9.1 Dielectrics, ferroelectrics

10:00 AM - 10:15 AM JST(1:00 AM - 1:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation AwardEnglish Presentation

[16a-M_B07-5] Nanocrossbar Ferroelectric Tunnel Junction Memory Based on Two-Dimensional Perovskite Nanosheets

〇(M2)Aditya Arun Nirmale¹, Seiichiro Izawa¹, Minoru Osada², Yutaka Majima¹ (1.MSL, Science Tokyo, 2.IMaSS, Nagoya Univ.)

Keywords:

Ferroelectric Tunnel Junction (FTJ),Perovskite Nanosheet,Nanocrossbar

Ferroelectric tunnel junctions (FTJs) are a promising candidate for scalable non-volatile memory, offering low power consumption and high-speed operation. However, conventional ferroelectric materials often suffer from grain-boundary leakage and scalability limitations. In this work, we demonstrate a highly scalable nanocrossbar FTJ architecture utilizing two-dimensional Dion-Jacobson (DJ) perovskite nanosheets (A'₂A_n-1Nb_nO_3n+1) with homologous series n=3-6. These nanosheets provide atomically precise thicknesses and grain-free structures. We fabricated the devices by depositing monolayers onto electron beam lithography-patterned bottom Pt nanowires using a "single drop assembly" method. The resulting devices using n=3,5 nanosheets exhibited clear current-voltage (I-V) hysteresis loops with a maximum tunneling electroresistance (TER) ratio of 35. These results demonstrate the viability of using 2D perovskite nanosheets for next-generation non-volatile memory technologies.