Presentation Information
[16a-PB4-10]Admittance Spectroscopy for Resonant Tunneling Diodes by Evaluating S-parameters up to 110 GHz
〇Michihiko Suhara1, Masato Hatori1, Kaito Maekawa1, Kazuki Sudo1, Jun Iwai1, Reisuke Goto1, Kik Alfred1, Kiyoto Asakawa2, Issei Watanabe3, Ryuto Machida3, Kouichi Akahane3 (1.Tokyo Metropolitan Univ., 2.Tokyo Metropolitan College of Industrial Technology, 3.National Institute of Information and Communications Technology)
Keywords:
resonant tunneling diode,S-parameters,quantum transport
The tunneling time, phase relaxation time, and heat bath relaxation time of the resonant tunnel diode (RTD) govern its terahertz dynamics, and their nonlinear bias voltage dependence originates from the RTD's intrinsic non-equilibrium nature. We have derived the RTD admittance function from the rate equation via second quantization. Here, we report the results of extracting quantum transport time constants using a unique spectroscopy method from the measured frequency characteristics of the admittance of a prototype RTD.