Presentation Information
[16a-PB4-15]Fabrication of Uni-Traveling Carrier Photodiodes Integrated with A Dierectric Grating Guided-Mode-Resonance Nanostructure
〇Taiki Nishimura1,2, Tsung-Tse Lin1, Ryota Kojima1,2, Akira Satou1 (1.RIEC, Tohoku Univ., 2.Tohoku Univ. Graduate school of Eng.)
Keywords:
UTC-PD,GMR structure
To realize next-generation wireless communication networks, ultra-broadband down-converters from optical to electrical signals are required. For such a purpose, InGaAs-based uni-traveling carrier photodiodes (UTC-PDs) have attracted attention due to their cutoff frequency at the 1.5-μm band as high as 300 GHz . On the other hand, its photoabsorption efficiency is low (10~20%) because thickening of the photoabsorption layer to improve the photoabsorption efficiency causes a degradation of the cutoff frequency. In order to overcome this trade-off, we proposed a novel structure of the UTC-PD embedded with a guided-mode resonance (GMR) structure consisting of a dielectric grating and a metallic mirror for enhancement of the photoabsorption efficiency .
In this study, we propose a fabrication process flow for the GMR-embedded UTC-PDs and conduct each process step to assess the feasibility of the proposed process flow.
In this study, we propose a fabrication process flow for the GMR-embedded UTC-PDs and conduct each process step to assess the feasibility of the proposed process flow.