[16a-S2_201-1~13] 10.4 Spintronics in semiconductor, topological material, superconductor, and multiferroics

9:00 AM - 9:15 AM JST(12:00 AM - 12:15 AM UTC)English Presentation

[16a-S2_201-1] Large anomalous Nernst effect above room temperature in (In,Fe)Sb ferromagnetic semiconductor

〇Namhai Pham¹, Kota Ejiri¹, Li Wentao¹, Shuzo Oeda¹, Yun Jaeyeon², Masaaki Tanaka² (1.Science Tokyo, 2.Univ. Tokyo)

Keywords:

Anomalous Nernst effect,(In,Fe)Sb

In this work, by optimizing the growth condition, we fabricated an n-type (In,Fe)Sb FMS thin film with high T_C ~ 458 K at the Fe concentration of 30%, which is the highest T_C reported so far in n-type FMSs. We then demonstrated that the transverse thermopower of this (In,Fe)Sb sample is much higher than those of metallic ferromagnets and comparable to those of the topological materials. The large transverse thermopower of (In,Fe)Sb may be used in an integrated heat flow sensor in III-V semiconductor devices and circuits.