[16a-S2_201-1~13] 10.4 Spintronics in semiconductor, topological material, superconductor, and multiferroics

9:45 AM - 10:00 AM JST(12:45 AM - 1:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation AwardEnglish Presentation

[16a-S2_201-4] Study of planar Hall effect and magnetic anisotropy in Fe/(Ga_{1-x},Fe_{x})Sb/InAs magnetic heterostructures

〇(M2)Jaeyeon Yun¹, Tanaka Masaaki^1,2,3, Anh Le Duc^1,2 (1.The Univ. of Tokyo, 2.CSRN, 3.NanoQuine)

Keywords:

Ferromagnetic semiconductor,Spintronics

We investigated the planar Hall effect and magnetic anisotropy in Fe/(Ga,Fe)Sb/InAs heterostructures, with particular emphasis on the Fe concentration dependence (7% and 14%) of the (Ga,Fe)Sb layer. At room temperature, the heterostructure containing 7% Fe in the (Ga,Fe)Sb layer exhibited predominantly cubic magnetic anisotropy, consistent with the body-centered cubic structure of Fe. In contrast, the sample with 14% Fe showed a dominant uniaxial magnetic anisotropy. This clear transition indicates that the Fe concentration in the underlying (Ga,Fe)Sb layer strongly influences the magnetic properties of the overlying Fe film. Furthermore, field-cooled measurements at 4.5 K revealed an exchange-bias-like coupling at the Fe/(Ga,Fe)Sb interface. These results demonstrate a promising route for tuning magnetic anisotropy in ferromagnetic semiconductor–based heterostructures.