[16a-S2_201-1~13] 10.4 Spintronics in semiconductor, topological material, superconductor, and multiferroics

10:45 AM - 11:00 AM JST(1:45 AM - 2:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation AwardEnglish Presentation

[16a-S2_201-7] Strain-induced crystal symmetry modulation and its impact on anomalous Hall transport in an altermagnetic material CrSb

〇Luming Zhou¹, Seiji Aota¹, Anh Le Duc^1,2, Masaaki Tanaka^1,2,3 (1.EEIS, UTokyo, 2.CSRN, UTokyo, 3.NanoQuine, UTokyo)

Keywords:

altermagnet

Altermagnetism is a new type of magnetic order that can generate anomalous Hall effects without net magnetization. CrSb is an altermagnetic material with a high critical temperature, but anomalous Hall effects are not always observed in epitaxial thin films.In this work, we investigate how external strain influences the transport properties of CrSb thin films. By bending ultrathin CrSb membranes, controllable strain is applied along a specific crystallographic direction. We find that compressive strain significantly modifies the ordinary Hall response and carrier densities, while the longitudinal resistivity remains nearly unchanged. Although no anomalous Hall effect is detected within the examined strain range, our results demonstrate that external strain is an effective way to tune carrier transport in altermagnetic CrSb thin films.