[16p-M_107-1~10] 13.6 Nanostructures, quantum phenomena, and nano quantum devices

3:00 PM - 3:15 PM JST(6:00 AM - 6:15 AM UTC)

[16p-M_107-3] Simulation of electron spin relaxation in (110) GaAs/AlGaAs superlattice

〇Yuzo Ohno^1,2, Iba Satoshi² (1.Univ. of Tsukuba, 2.AIST)

Keywords:

spin relaxation,superlatticce,spin-orbit interaction

GaAs/AlGaAs(110) superlattices were fabricated by systematically changing the barrier layer thickness and the number of periods, and electron spin relaxation time measurement experiments were carried out. As a result, it was revealed that the electron spin relaxation time changes depending on the tunnel strength and the number of periods. Furthermore, by modeling the spin-orbit interaction in the superlattice mini-band and performing Monte Carlo simulations, we succeeded in reproducing the experimental results very well as a result of calculating the spin relaxation time.