Presentation Information

[16p-M_B104-10]High-Resolution Quantitative Static Charge Imaging via Floating-Extended-Gate Organic Field-Effect Transistor Arrays

〇Yudai Hemmi1, Kodai Uto1, Itsuki Shoji1, Hideki Wada1, Toshiyuki Sugimoto2, Hiroyuki Matsui1 (1.ROEL, Yamagata Univ., 2.Faculty of Engineering, Yamagata Univ.)

Keywords:

Organic Field-Effect Transistor (OFET),Static electricity,Flexible Electronics

Static marks generated by friction between dissimilar materials consist of finely mixed positive and negative charges, making 2D imaging difficult with conventional surface electrometers and causing contamination when using charged toners. To address these issues, we developed a 128-element floating extended-gate organic transistor array. In this report, we demonstrate that this device enables non-contact, non-contaminating, and quantitative evaluation of fine static marks with sub-millimeter resolution, which has been challenging to achieve with conventional methods.