[16p-S2_201-1~11] 10.4 Spintronics in semiconductor, topological material, superconductor, and multiferroics

2:45 PM - 3:00 PM JST(5:45 AM - 6:00 AM UTC)

[16p-S2_201-4] Spin-dependent photocurrent properties of spin photodiodes with CoFeB/Mo electrodes having different Mo film thicknesses

〇Takeru Omi¹, Daiki Mineyama², Itsu Tanaka², Kaito Nakama³, Hidetoshi Hashimoto³, Keisuke Minehisa³, Junichi Takayama², Fumitaro Ishikawa³, Akihiro Murayama², Satoshi Hiura² (1.Hokkaido Univ., 2.IST,Hokkaido Univ., 3.RCIQE,Hokkaido Univ.)

Keywords:

spin photodiode,dilute nitride semiconductor,circularly polarized light