Presentation Information
[16p-WL2_201-8]All-optical switching using a nanowire WGM cavity on a SiN waveguide
〇(D)Jona Zoellner1,2, Masato Takiguchi1,3, Guoqiang Zhang1,3, Siyu Chen1, Satoshi Sasaki1, Takuma Aihara4, Xuejun Xu1, Jonathan Finley2, Hideki Gotoh5, Haruki Sanada1, Hisashi Sumikura1,3, Masaya Notomi1,3,6 (1.NTT BRL, 2.WSI TUM, 3.NTT NPC, 4.NTT DTL, 5.RISE HU, 6.Science Tokyo)
Keywords:
optical switching,nanowire,silicon nitride
In this work, we demonstrate all-optical switching using whispering-gallery modes (WGMs) confined in an InAs/InP multi-quantum disk segment which is embedded in an InP nanowire (NW). The NW is integrated onto a SiN waveguide with its axis perpendicular to the WG axis using a transfer-printing technique, enabling efficient excitation of WGMs via the TE WG mode. Transmission spectroscopy reveals WGMs with Q-factors up to ~700. Optical switching is of CW probe light is achieved by pump-induced carrier plasma effects, yielding a switching time of 1.2 ns. Doped nanowire segments adjacent to the active multi-quantum disk region enable a path toward future electrically driven modulation, highlighting the potential of this device for compact on-chip electro-optic modulators.