[17a-M_178-1~13] 17.3 Layered materials

9:45 AM - 10:00 AM JST(12:45 AM - 1:00 AM UTC)English Presentation

[17a-M_178-4] Proximity-Texture Selection Rules for Anomalous and Berry-Curvature-Dipole Hall Effects in 1H–NbX₂

〇(PC)Yusuf Wicaksono¹, Toshikaze Kariyado¹ (1.NIMS)

Keywords:

Metallic 2D materials,Anomalous Hall conductivity,Nonlinear Hall effect

Nonlinear Hall responses probe band quantum geometry but are often symmetry-forbidden in pristine 2D metals. We show that layer-selective magnetic proximity in van der Waals stacks enables coexisting yet independently tunable anomalous Hall (AHC) and BCD-driven nonlinear Hall effects in nonmagnetic 1H–NbX₂ (X = S, Se, Te). In pristine NbX₂, D₃h symmetry with time reversal enforces AHC = 0 and Berry-curvature dipole = 0. Relativistic DFT + Wannier interpolation with sublayer exchange fields shows: one-sided proximity (σ_h broken) induces Rashba SOC; pure out-of-plane, C₃-symmetric exchange yields sizable AHC but NLHC ≈ 0; a small in-plane component or noncollinear top/bottom exchange breaks the remaining symmetry and activates strong, gate-tunable NLHC scaling, linearly with the in-plane exchange. The NLHC grows from NbS2→NbSe2→NbTe2. An orthogonal dual-interface device uses 1ω (AHE) and 2ω (NLHC) Hall voltages as two sign bits for four-state memory.