[17a-M_374-1~12] 10.3 Spin devices, magnetic memories and storages

11:15 AM - 11:30 AM JST(2:15 AM - 2:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation AwardEnglish Presentation

[17a-M_374-10] Giant Perpendicular Magnetic Anisotropy in Mo / Boron-rich CoFeB / MgAl₂O₄ Heterostructure for p-MTJ integration to 5-7 nm CMOS Processes

〇Sho Kagami¹, Zhang Ruixian¹, Daiki Ito¹, Quang Le², Brian York², Cherngye Hwang², Xiaoyong Liu², Son Le², Maki Maeda³, Tuo Fan³, Yu Tao³, Hisashi Takano³, Pham Nam Hai³ (1.Science Tokyo, 2.W.D. Inc., Great Oaks, 3.W.D. Inc., Fujisawa)

Keywords:

CMOS,Magnetic Tunnel Junction,Perpendicular Magnetic Anisotropy

Perpendicular magnetic tunnel junctions (p-MTJs) with perpendicular magnetic anisotropy (PMA) are essential building blocks for the scaling of magnetoresistive random access memory (MRAM). However, in conventional CoFeB/MgO structures, the magnetic anisotropy field H_k is about 4–6 kOe and the effective magnetic anisotropy energy coefficient K_eff is about 3×10⁶–5×10⁶ erg×cm^-3, hindering further device miniaturization beyond the 16 nm CMOS process. In this study, by combining a boron-rich Co₁₉Fe₅₆B₂₅ with a boron-blocking Mo layer and a boron-absorbing MgAl₂O₄ layer, we demonstrate a giant PMA with H_k = 17.5–19.5 kOe and K_eff = 6.9 × 10⁶–9.4 × 10⁶ erg/cm³ for a single CoFeB, which is compatible with the 7 nm CMOS process. Furthermore, by employing a double-CoFeB-layer structure, the minimum MTJ diameter can be reduced to 14.5 nm, demonstrating compatibility with the advanced 5 nm CMOS process.