[17a-M_374-1~12] 10.3 Spin devices, magnetic memories and storages

11:30 AM - 11:45 AM JST(2:30 AM - 2:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation AwardEnglish Presentation

[17a-M_374-11] Giant Perpendicular Magnetic Anisotropy in Mo/CoFeB/MgAl₂O₄ Multilayers

〇Daiki Ito¹, Ruixian Zhang¹, Sho Kagami¹, Quang Le², Brian York², Cherngye Hwang², Xiaoyong Liu², Son Le², Maki Maeda³, Fan Tuo³, Yu Tao³, Hisashi Takano³, Nam Hai Pham¹ (1.Science Tokyo, 2.WD Inc., Great Oaks, 3.WD Inc., Fujisawa)

Keywords:

CMOS,magnetic tunnel junction,perpendicular magnetic anisotropy

Currently, MRAM remains limited to CMOS 14–16 nm processes. To achieve further scaling, it is essential to increase the effective thickness of CoFeB while maintaining giant perpendicular magnetic anisotropy (PMA). In this work, we fabricated and evaluated the giant PMA in multilayers (double and triple layers) of Mo/CoFeB/MgAl₂O₄. we obtained magnetic anisotropy energy constant K_eff = 6.1×10⁶ erg/cm³ , which is similar to that of a single CoFeB layer, and confirmed our multilayers CoFeB can be applied to p-MTJ compatible to the 5 nm CMOS process.