[17a-W2_402-1~5] 12.1 Fabrications and Structure Controls

11:00 AM - 11:15 AM JST(2:00 AM - 2:15 AM UTC)

[17a-W2_402-5] p⁺-i-p⁺ type PBTTT transistors using transfer process with the polymer stamps and anion-exchange doping

〇Yuichi Nakajima¹, Hyuji Akutagawa¹, Kazuki Takayama¹, Kei Noda¹ (1.Keio Univ.)

Keywords:

Push-Coating,anion-exchange doping

In the formation of organic semiconductor thin films, conventional solution-based processes often suffer from dissolution or delamination of the underlying organic layer when sequentially depositing multilayer structures, owing to the solvent used for the upper layer. In this study, we circumvent this issue by employing a semi-dry process based on a polymer stamp, enabling the stacking of organic thin films without damaging the underlying layers. Using this approach, we fabricated and evaluated p⁺-i-p⁺ transistors with a bottom-gate top-contact (BGTC) architecture incorporating anion-exchange doping.