[17p-M_101-1~18] 17.2 Graphene

3:15 PM - 3:30 PM JST(6:15 AM - 6:30 AM UTC)English Presentation

[17p-M_101-5] GNR arrays grown on periodic SiC nano surfaces by CVD

〇(DC)Sukran Kutlu¹, ANTON VISIKOVSKIY¹, TANAKA SATORU^1,5, Kan Nakatsuji², Fumio Komori^2,3, Takushi Iimori³, Jo Onoda⁴ (1.Kyushu University, 2.Tokyo Inst. Tech, 3.Univ. Tokyo, 4.Univ. Teacher Edu. Fukuoka, 5.Taiwan Tech.)

Keywords:

Graphene nanoribbons,off axis SiC,cvd,Nitrogen annealing,surface morphology

Due to the inherent lack of band gap in single-layer graphene, the direct application of graphene layers in many electronic devices is limited [1]. Digital switching devices such as field-effect transistors (FETs) require an electronic band gap to achieve high on/off ratios. A promising way to impart a band gap to graphene is to transform it into quasi-one-dimensional graphene nanoribbons (GNRs) [2]. Furthermore, obtaining GNR arrays is practically important for increasing the on-current in FETs. In the present study, GNR growth was achieved on off-axis 6H-SiC substrates by chemical vapor deposition (CVD).