[18a-W9_323-1~10] CS.7 Code-sharing Session of 6.5 & 7.5

9:30 AM - 9:45 AM JST(12:30 AM - 12:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation AwardEnglish Presentation

[18a-W9_323-3] Elucidation of the Electronic Transport Structure of Si(111)-In (4×1) Surface by In Situ Microscale Multiprobe Measurements

〇(M1)YeJin Lea Lee^1,2, Suryo Santoso Putro³, Tomoyuki Iori⁴, Tadashi Abukawa^1,3, Kazuyuki Sakamoto^5,6,7, Hiroshi Kumigashira³, Kenichi Ozawa⁸, Ryu Yukawa¹ (1.SRIS, Tohoku Univ., 2.FSI, Sorbonne Univ., 3.IMRAM, Tohoku Univ., 4.Space Tracking & Communications Center, JAXA, 5.Department of Applied Physics, Osaka Univ., 6.OTRI, Osaka Univ., 7.Center for Spintronics Research Network, Osaka Univ., 8.IMSS, KEK)

Keywords:

Metal-insulator transition,ARPES,Electronic conductivity

My study investigates the electronic transport of the Si(111)-In(4x1) surface, an ideal 1D metallic system known for its low-temperature metal-insulator transition. Despite extensive research, uncertainties persist regarding the carrier transport coupling between surface states and the Si bulk. To address this, we performed in situ microscale multiprobe measurements with 100 µm electrode spacing in an ultra-high vacuum chamber. An n-type Si(111) substrate was prepared via flash annealing and indium deposition. LEED patterns confirmed a high-quality single-domain surface, while resistance measurements showed a sharp increase during cooling, successfully capturing the MIT. ARPES was also used to verify electronic states. These findings allow for a new surface-bulk transport model based on multi-probe distribution analysis.