[18a-WL2_101-1~11] 13.8 Optical properties and light-emitting devices

10:00 AM - 10:15 AM JST(1:00 AM - 1:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[18a-WL2_101-5] Electric-field-driven circular polarity modulator using dilute nitride semiconductors

〇Hiroto Kise¹, Keisuke Minehisa², Junichi Takayama¹, Akihiro Murayama¹, Fumitaro Ishikawa², Satoshi Hiura¹ (1.IST, Hokkaido Univ., 2.RCIQE, Hokkaido Univ.)

Keywords:

Circular polarization,Electric field,Dilute nitride semiconductor

To establish new information and communication technologies utilizing circular polarization, the development of a high-speed circular polarity modulator capable of arbitrary modulation of light helicity is required. In this study, we fabricated a sample containing two types of circularly polarized luminescent layers, in which dilute nitride GaNAs and GaInNAs quantum wells are designed as left- and right-handed circularly polarized luminescent layers, respectively. By tilting the band potential in the semiconductor using an external electric field, the dominant luminescent layer switched between the GaNAs quantum well under a negative electric field and the GaInNAs quantum well under a positive electric field. As a result, the photoluminescence intensity ratio between the left- and right-handed circularly polarized luminescent layers was changed, thereby achieving a modulation of circular polarity at room temperature.