[G3-O202] Oral 202

2:40 PM - 3:00 PM JST(5:40 AM - 6:00 AM UTC)

[G3-O202-02] Electrical properties of Ge-doped α-Ga₂O₃ films with high electron mobilities grown by mist-CVD

*Takeru Wakamatsu¹, Hirokazu Izumi², Hitoshi Takane¹, Yuki Isobe¹, Kentaro Kaneko^1,3, Katsuhisa Tanake¹ (1. Kyoto Univ. (Japan), 2. Hyogo Prefectural Inst. of Tech. (Japan), 3. Ritsumeikan Univ. (Japan))

Keywords:

Ga2O3,mist-CVD,doping