Materials Research Meeting 2025 (MRM2025)
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Oral SessionG. Advanced Materials and Emerging Technologies for Device Development : [G-3] Synthesis, Processing, and Nanoscale Characterization of Functional Oxide Thin Films - 9th MRS-J & E-MRS Bilateral Symposium-

[G3-O202]Oral 202

Wed. Dec 10, 2025 2:00 PM - 5:30 PM JST
Wed. Dec 10, 2025 5:00 AM - 8:30 AM UTC
Session 15(G218)
Chair:Mircea Modreanu(Tyndall National Institute-University College Cork, Ireland), Marius Grundmann(Universität Leipzig), Valentin Craciun(National Institute for Laser, Plasma and Radiation Physics, Magurele, Romania and Extreme Light Infrastructure for Nuclear Physics, HH-IFIN, Magurele, Romania)
2:00 PM - 2:40 PM JST(5:00 AM - 5:40 AM UTC)

[G3-O202-01]Rhombohedral gallium oxide thin films for transistor devices

*Marius Grundmann1 (1. Universität Leipzig (Germany))
2:40 PM - 3:00 PM JST(5:40 AM - 6:00 AM UTC)

[G3-O202-02]Electrical properties of Ge-doped α-Ga2O3 films with high electron mobilities grown by mist-CVD

*Takeru Wakamatsu1, Hirokazu Izumi2, Hitoshi Takane1, Yuki Isobe1, Kentaro Kaneko1,3, Katsuhisa Tanake1 (1. Kyoto Univ. (Japan), 2. Hyogo Prefectural Inst. of Tech. (Japan), 3. Ritsumeikan Univ. (Japan))
3:00 PM - 3:15 PM JST(6:00 AM - 6:15 AM UTC)

break

3:15 PM - 3:35 PM JST(6:15 AM - 6:35 AM UTC)

[G3-O202-03]Operando Raman imaging analysis of semiconductor device structures with micro-four-point probes

*Naoka Nagamura1,2,3, Gotoh Riku2, Kenta Oishi2 (1. NIMS (Japan), 2. Tokyo Univ. of Science (Japan), 3. Tohoku Univ. (Japan))
3:35 PM - 3:55 PM JST(6:35 AM - 6:55 AM UTC)

[G3-O202-04]Influence of Sensing Properties with Field Effect for MoOx/Graphene FET Gas Sensor Devices

*Otoya Okanishi1, Akihiro Katsura1, Yukiko Hirose, Naoka Nagamura2,3,4, Takao Ono5, Takafumi Uemura6, Tohru Sugahara1 (1. Kyoto Inst. of Tech. (Japan), 2. NIMS (Japan), 3. Tokyo Univ. of Sci. (Japan), 4. Tohoku Univ. (Japan), 5. Osaka Univ., Grad. Sch. of Eng. Sci. (Japan), 6. Osaka Univ., SANKEN (Japan))
3:55 PM - 4:15 PM JST(6:55 AM - 7:15 AM UTC)

[G3-O202-05]Hybridization of Laser-Induced Graphene and Molybdenum Trioxide with Metal−Organic Decomposition for Volatile Organic Compound Gas Sensing

*Akihiro Katsura1, Otoya Okanishi1, Yukiko Hirose1, Yuma Miura1, Wenliang Zhu1, Tohru Sugahara1 (1. Kyoto Institute of Techonology (Japan))
4:15 PM - 4:35 PM JST(7:15 AM - 7:35 AM UTC)

[G3-O202-06]Quantitative Evaluation of Surface Structures for Nanomaterial Applications via Topological Data Analysis

*Nodoka Takatsuka1, Yukiko Hirose1, Kazuto Akagi2, Emi Minamitani3, Tohru Sugahara1,3 (1. Kyoto Inst. Tech. (Japan), 2. Tohoku Univ. (Japan), 3. SANKEN (Japan))
4:35 PM - 4:55 PM JST(7:35 AM - 7:55 AM UTC)

[G3-O202-07]Reliable Multilevel Resistance States in TaOx-Based RRAM Enabled by Pulse Modulation and Filament Dynamics Simulation

*Kuan-Han Lin1 (1. Department of Materials Science and Engineering, National Cheng Kung University (Taiwan))
4:55 PM - 5:25 PM JST(7:55 AM - 8:25 AM UTC)

[G3-O202-08]The electrode–electrolyte interface of Cu via modulation excitation X-ray absorption spectroscopy

*Junko Yano1, Angel Garcia-Esparza2, Philipp Simon1, Dimosthenis Sokaras2 (1. Lawrence Berkeley National Lab. (United States of America), 2. SLAC National Accelerator Lab. (United States of America))
5:25 PM - 5:30 PM JST(8:25 AM - 8:30 AM UTC)

Time adjustment

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