[G3-O202] Oral 202

3:35 PM - 3:55 PM JST(6:35 AM - 6:55 AM UTC)

[G3-O202-04] Influence of Sensing Properties with Field Effect for MoO_x/Graphene FET Gas Sensor Devices

*Otoya Okanishi¹, Akihiro Katsura¹, Yukiko Hirose, Naoka Nagamura^2,3,4, Takao Ono⁵, Takafumi Uemura⁶, Tohru Sugahara¹ (1. Kyoto Inst. of Tech. (Japan), 2. NIMS (Japan), 3. Tokyo Univ. of Sci. (Japan), 4. Tohoku Univ. (Japan), 5. Osaka Univ., Grad. Sch. of Eng. Sci. (Japan), 6. Osaka Univ., SANKEN (Japan))

Keywords:

Field effect transistor,Molybdenum oxide,Graphene,Gas Sensor