Presentation Information
[G3-P203-18]A Study of Switching Mechanism in ITO/SiOx/ITO ReRAM Based on Electrode Surface Observation
*Yuito Makishima1, Kento Moriya1, Yugo Yamaguchi1, Tomohiro Yamaguchi1, Shinya Aikawa1 (1. Kogakuin Univ. (Japan))
Keywords:
ReRAM,SiO2,ITO,Switching behavior,Surface observation
