[G4-O201] Oral 201

9:00 AM - 9:45 AM JST(12:00 AM - 12:45 AM UTC)

[G4-O201-01] The alpha-phase of ultrawide gap gallium oxide: Epitaxy, doping and device properties

*Marius Grundmann¹ (1. Universität Leipzig (Germany))

Keywords:

gallium oxide,transistor,alpha-phase