Materials Research Meeting 2025 (MRM2025)
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Oral SessionG. Advanced Materials and Emerging Technologies for Device Development : [G-4] Inorganic Thin Films for Sustainable Applications: From Material Design to Devices

[G4-O201]Oral 201

Wed. Dec 10, 2025 9:00 AM - 12:00 PM JST
Wed. Dec 10, 2025 12:00 AM - 3:00 AM UTC
Session 2(G301)
Chair:Song-Ku HONG(Chungnam National Univ.), Marius Grundmann(Leipzig Univ.)
9:00 AM - 9:45 AM JST(12:00 AM - 12:45 AM UTC)

[G4-O201-01]The alpha-phase of ultrawide gap gallium oxide: Epitaxy, doping and device properties

*Marius Grundmann1 (1. Leipzig Univ.(Germany))
9:45 AM - 10:30 AM JST(12:45 AM - 1:30 AM UTC)

[G4-O201-02]Current status of gallium oxide material and device technologies

*Masataka Higashiwaki1,2 (1. Osaka Metropolitan Univ. (Japan), 2. Nat. Inst. of Info. and Comm. Tech. (Japan))
10:30 AM - 10:45 AM JST(1:30 AM - 1:45 AM UTC)

break

10:45 AM - 11:15 AM JST(1:45 AM - 2:15 AM UTC)

[G4-O201-03]Revisiting and Insight into the Stacking Faults in 4H-SiC for Power Devices

*SOON-KU HONG1, Moonkyong Na2, Hyundon Jung3, Wook Bahng2 (1. Chungnam National Univ. (Korea), 2. Korea Electrotechnology Research Inst. (Korea), 3. Horiba STEC Korea (Korea))
11:15 AM - 11:30 AM JST(2:15 AM - 2:30 AM UTC)

[G4-O201-04]Investigation of Characteristics and Carrie Lifetimes of Stacking Faults and Related Complex Defects in 4H-SiC Epitaxial Wafers by PL Spectra and Carrier Lifetime Mapping

*Moonkyong Na1, Soon-Ku Hong2, Hyundon Jung3, Wook Bahng1, Dohyung Kim3, Chanhyoung Oh3, Donghyun Jang3, Taswar Iqbal2, Do Yeon Park1,4 (1. Korea Electrotechnology Research Inst.(Korea), 2. Chungnam National Univ. (Korea), 3. Horiba STEC Korea (Korea), 4. Kyungpook National University (Korea))
11:30 AM - 11:45 AM JST(2:30 AM - 2:45 AM UTC)

[G4-O201-05]The Physical Properties of Nitrogen Doped β-Ga2O3 Substrate and the ALD Films

*Shodai Ata1, Katsuhiro Furukawa1, Hisashi Soma1, Takeshi Yoshimura1, Norifumi Fujimura1 (1. Osaka Metropolitan Univ. (Japan))
11:45 AM - 12:00 PM JST(2:45 AM - 3:00 AM UTC)

[G4-O201-06]Effect of Nitrogen Flow on Phase Transition of Boron Nitrides Thin Films Deposited by Reactive HiPIMS of B₄C Target

*Anwar Sulaiman1, Hayate Nagakura1, Tetsuhide Shimuzu¹

 (1. Thin-film Process Engineering Laboratory, Tokyo Metropolitan Univ. (Japan))
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