Materials Research Meeting 2025 (MRM2025)
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Oral SessionG. Advanced Materials and Emerging Technologies for Device Development : [G-4] Inorganic Thin Films for Sustainable Applications: From Material Design to Devices

[G4-O201]Oral 201

Wed. Dec 10, 2025 9:00 AM - 12:00 PM JST
Wed. Dec 10, 2025 12:00 AM - 3:00 AM UTC
Session 2(G301)
Chair:Song-Ku HONG(Chungnam National Univ.), Marius Grundmann(Universität Leipzig)
9:00 AM - 9:45 AM JST(12:00 AM - 12:45 AM UTC)

[G4-O201-01]The alpha-phase of ultrawide gap gallium oxide: Epitaxy, doping and device properties

*Marius Grundmann1 (1. Universität Leipzig (Germany))
9:45 AM - 10:30 AM JST(12:45 AM - 1:30 AM UTC)

[G4-O201-02]Current status of gallium oxide material and device technologies

*Masataka Higashiwaki1,2 (1. Osaka Metropolitan Univ. (Japan), 2. Natl. Inst. of Info. and Comm. Tech. (Japan))
10:30 AM - 10:45 AM JST(1:30 AM - 1:45 AM UTC)

break

10:45 AM - 11:15 AM JST(1:45 AM - 2:15 AM UTC)

[G4-O201-03]Revisiting and Insight into the Stacking Faults in 4H-SiC for Power Devices

*SOON-KU HONG1, Moonkyong Na2, Hyundon Jung3, Wook Bahng2 (1. Chungnam National Univ. (Korea), 2. Korea Electrotechnology Research Inst. (Korea), 3. Horiba STEC Korea (Korea))
11:15 AM - 11:30 AM JST(2:15 AM - 2:30 AM UTC)

[G4-O201-04]Investigation of Characteristics and Carrie Lifetimes of Stacking Faults and Related Complex Defects in 4H-SiC Epitaxial Wafers by PL Spectra and Carrier Lifetime Mapping

*Moonkyong Na1, Soon-Ku Hong2, Hyundon Jung3, Wook Bahng1, Dohyung Kim3, Chanhyoung Oh3, Donghyun Jang3, Taswar Iqbal2, Do Yeon Park1,4 (1. Korea Electrotechnology Research Institute (Korea), 2. Chungnam National University (Korea), 3. Horiba STEC Korea (Korea), 4. Kyungpook National University (Korea))
11:30 AM - 11:45 AM JST(2:30 AM - 2:45 AM UTC)

[G4-O201-05]The Physical Properties of Nitrogen Doped β-Ga2O3 Substrate and the ALD Films

*Shodai Ata1, Katsuhiro Furukawa1, Hisashi Soma1, Takeshi Yoshimura1, Norifumi Fujimura1 (1. Osaka Metropolitan Univ. (Japan))
11:45 AM - 12:00 PM JST(2:45 AM - 3:00 AM UTC)

[G4-O201-06]Effect of Nitrogen Flow on Phase Transition of Boron Nitrides Thin Films Deposited by Reactive HiPIMS of B4C Target

*Anwar Sulaiman Olfion1, Hayate Nagakura1 (1. Thin-film Process Engineering Laboratory, Tokyo Metropolitan University (Japan))
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