[G4-O201] Oral 201

9:45 AM - 10:30 AM JST(12:45 AM - 1:30 AM UTC)

[G4-O201-02] Current status of gallium oxide material and device technologies

*Masataka Higashiwaki^1,2 (1. Osaka Metropolitan Univ. (Japan), 2. Natl. Inst. of Info. and Comm. Tech. (Japan))

Keywords:

Gallium oxide,Ga2O3,Field effect transistor (FET),Diode