[G4-O201] Oral 201

11:15 AM - 11:30 AM JST(2:15 AM - 2:30 AM UTC)

[G4-O201-04] Investigation of Characteristics and Carrie Lifetimes of Stacking Faults and Related Complex Defects in 4H-SiC Epitaxial Wafers by PL Spectra and Carrier Lifetime Mapping

*Moonkyong Na¹, Soon-Ku Hong², Hyundon Jung³, Wook Bahng¹, Dohyung Kim³, Chanhyoung Oh³, Donghyun Jang³, Taswar Iqbal², Do Yeon Park^1,4 (1. Korea Electrotechnology Research Institute (Korea), 2. Chungnam National University (Korea), 3. Horiba STEC Korea (Korea), 4. Kyungpook National University (Korea))

Keywords:

4H-SiC,Stacking Fault,Complex Defect,Photoluminescence,Carrier Lifetime,Mapping