[G4-O201] Oral 201

11:30 AM - 11:45 AM JST(2:30 AM - 2:45 AM UTC)

[G4-O201-05] The Physical Properties of Nitrogen Doped β-Ga₂O₃ Substrate and the ALD Films

*Shodai Ata¹, Katsuhiro Furukawa¹, Hisashi Soma¹, Takeshi Yoshimura¹, Norifumi Fujimura¹ (1. Osaka Metropolitan Univ. (Japan))

Keywords:

wide-bandgap semiconductor,N doped Ga2O3,ALD