[G4-O201] Oral 201

11:45 AM - 12:00 PM JST(2:45 AM - 3:00 AM UTC)

[G4-O201-06] Effect of Nitrogen Flow on Phase Transition of Boron Nitrides Thin Films Deposited by Reactive HiPIMS of B₄C Target

*Anwar Sulaiman¹, Hayate Nagakura¹, Tetsuhide Shimuzu¹

(1. Thin-film Process Engineering Laboratory, Tokyo Metropolitan Univ. (Japan))

Keywords:

c-BN,HiPIMS,Nitrogen flow rate,FT-IR,XPS