[G4-P102] Poster 102

[G4-P102-17] Radiation Hardness Dependence on Channel Thickness in Oxide Thin-film Transistors

*Dongil Ho¹, Choongik Kim² (1. Kongju National Univ. (Korea), 2. Sogang Univ. (Korea))

Keywords:

thin-film transistors,metal-oxides,radiation hardness,channel thickness,in situ