Presentation Information
[G4-P202-21]Internal Stress of GaN thin films deposited by reactive HiPIMS
*Koki Karikomi1, Koo Bando2, Mirei Tokiwa2, Yoshihiro Ueoka2, Tetsuhide Shimizu1 (1. Tokyo Metropolitan Univ. (Japan), 2. Tosoh Corp. (Japan))
Keywords:
HiPIMS,GaN,Internal stress,Reactive sputtering