Materials Research Meeting 2025 (MRM2025)
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Poster SessionG. Advanced Materials and Emerging Technologies for Device Development : [G-4] Inorganic Thin Films for Sustainable Applications: From Material Design to Devices

[G4-P202]Poster 202

Wed. Dec 10, 2025 3:30 PM - 5:30 PM JST
Wed. Dec 10, 2025 6:30 AM - 8:30 AM UTC
Poster(G1+G2)

[G4-P202-01]Investigation of the Crystallization Mechanism of Amorphous ITO Thin Films Induced by Laser Annealing

*DONGYANG GUO1, Maiki Sato1, Keita Katayama1,2, Yohei Tanaka2, Hisato Yabuta1,2 (1. Graduate School and Faculty of Information Science and Electrical Engineering, Kyushu Univ. (Japan), 2. Department of Gigaphoton Next GLP, Kyushu Univ. (Japan))

[G4-P202-02]Thermal Diffusion Mechanisms of Sn Doping into β-Ga2O3 Using a KrF Excimer Laser

*Yifan Liu1, Misa Beppu1, Keita Katayama1,2, Yohei Tanaka2, Hisato Yabuta1,2 (1. Graduate School and Faculty of Information Science and Electrical Engineering, Kyushu Univ. (Japan), 2. Department of Gigaphoton Next GLP, Kyushu Univ. (Japan))

[G4-P202-03]Quantitative Evaluation of Momentum Transfer for Low-Temperature Crystallization using HiPIMS Synchronized Pulsed Substrate Bias

*Rina Watabe1, Fuka Nishimura1, Erdong Chen1, Tetsuhide Shimizu1 (1. Tokyo Metropolitan Univ. (Japan))

[G4-P202-04]Semiconducting Al-Mg Double-Hydroxide Thin Films Fabricated by the Drop-Dry Deposition

*Masaya Ichimura1, Koki Okura1 (1. Nagoya Institute of Technology (Japan))

[G4-P202-05]Sputter Epitaxy Of Zn1-xMgxO Thin Films On Sapphire Substrates Using Wurtzite MgO Buffers And ZnO Interlayers

*Hibiki Noguchi1, Hiroki Otsuyama1, Takafumi Yunoue1, Kotaro Yataka1, Naoto Yamashita1, Takamasa Okumura1, Kunihiro Kamataki1, Kazunori Koga1, Masaharu Shiratani1, Naho Itagaki1 (1. Kyushu Univ. (Japan))

[G4-P202-06]Improvement of mosaic property of sputtered GaN thin film

*Riki Kanetake1, Akinori Saito1, Naoomi Yamada1 (1. Chubu.Univ. (Japan))

[G4-P202-07]Small Data Machine Learning for Deposition Condition of Mo-doped In2O3 Transparent Conducting Films

*Oga Hayashi1, Naoomi Yamada1 (1. Chubu Univ. (Japan))

[G4-P202-08]Optical Switching in Single Valley Semiconductor InN

*Zihan Lin1, Takashi Yagi2, Junjun Jia1 (1. Waseda Univ. (Japan), 2. National Inst. of Advanced Indus. Sci. and Tech. (Japan))

[G4-P202-09]Local Structure and Function of Dopants in Ti-, V- and Cr-based Transition Metal Oxides

*Toshihiro Okajima1,2 (1. Aichi Synchrotron Radiation Center (Japan), 2. Aoyama Gakuin Univ. (Japan))

[G4-P202-10]Ambient Pressure XPS Study of the Atomic Layer Deposition of TiOx on a NMC-based Cathode

*Princess Stephanie Llanos1, Zahra Ahaliabadeh2, Ville Miikkulainen1, Esko Kokkonen3, Rosemary Jones3, Samuli Urpelainen4, Tanja Kallio1 (1. Aalto Univ. (Finland), 2. Beneq (Finland), 3. Lund Univ. (Sweden), 4. Univ. of Oulu (Finland))

[G4-P202-11]Fundamental Study on Photoelectrochemical Properties of Niobium-doped Titanium Oxides with Spherical Morphologies

*Tomohiro Tojo1, Emi Iwata2, Keito Suzuki2, Rui Masaki1, Ryoji Inada1 (1. Toyohashi Univ. Tech. (Japan), 2. Shizuoka Inst. Sci. Tech. (Japan))

[G4-P202-12]Characterization of electronic properties of (Ba,Sn)S thin films by UPS and IPES

*Takehiko Nagai1,2, Soma Endo1,3, Hitoshi Tampo1, Hajime Shibata1, Norio Terada1,2, Fumio Kawamura4, Hidenobu Murata5 (1. National Institute of Advanced Industrial Science and Technology (AIST) (Japan), 2. Kagoshima Univ. (Japan), 3. Miyazaki Univ. (Japan), 4. National Institute for Materials Science (NIMS) (Japan), 5. Fine Ceramics Center (JFCC) (Japan))

[G4-P202-13]Direct Observation of Electron Trap States in SiO2 Gate Insulating Films Using Constant Final State Photoelectron Yield Spectroscopy

*Renjiro Shibuya1, Manato Tateno1, Tomohiro Ishibashi1, Runa Hoshikawa1, Hirohiko Fukagawa2,3, Hisao Ishii1,2,3 (1. Graduate School of Sci. and Eng., Chiba Univ. (Japan), 2. Center for Frontier Sci., Chiba Univ. (Japan), 3. Molecular Chirality Research Center, Chiba Univ. (Japan))

[G4-P202-14]Stress Evolution and Crack Formation in ITO Thin Films under KrF Excimer Laser Annealing

*Maiki Sato1, Dongyang Guo1, Keita Katayama1,2, Yohei Tanaka2, Hisato Yabuta1,2 (1. Grad. Sch. of ISEE, Kyushu Univ. (Japan), 2. Department of Gigaphoton NEXT GLP, Kyushu Univ. (Japan))

[G4-P202-15]Voltage Amplification in ZnO:Mn Thin Films Sputtered on Recycled Fe Transformer Foils for Frequency-Responsive Energy Applications

*Karen Ailed Neri-Espinoza1, José Alberto Andraca-Adame1, Francisco Gutiérrez-Galicia1, Lucía Ivonne Juárez-Amador2, Héctor Javier Dorantes-Rosales3, Ramón Peña-Sierra4 (1. Department of Nanomaterials, Unidad Profesional Interdisciplinaria de Ingeniería Campus Hidalgo (UPIIH), Instituto Politécnico Nacional (IPN) (Mexico), 2. Departamento de Ingeniería de Proyectos, CUCEI, Universidad de Guadalajara (Mexico), 3. Department of Metallurgical and Materials Engineering, Escuela Superior de Ingeniería Química e Industrias Extractivas (ESIQIE), Instituto Politécnico Nacional (IPN) (Mexico), 4. Department of Electrical Engineering, Sección de Electrónica de Estado Sólido (SEES), Center for Research Advanced Studies of the National Polytechnic Institute (CINVESTAV-IPN) (Mexico))

[G4-P202-16]Fabrication of Rutile-Type GeO2 Films Without Epitaxial Stabilization

*Keiji Shibata1, Fumio Kawamura2, Noomi Yamada1 (1. Chubu Univ. (Japan), 2. Research Center for Electronic and Optica Materials, National Institute for Materials Science(NIMS) (Japan))

[G4-P202-17]Epitaxial Growth of Ternary CuBiI4 and Its Intrinsic Properties

*Koki Ogawa1, Mirei Takahashi1, Hidenobu Murata2, Naoomi Yamada1 (1. Chubu Univ. (Japan), 2. Japan Fine Ceramics Center (Japan))

[G4-P202-18]Enhanced Hole Density in CuI via Chalcogen Doping

*Mashu Toyoda1, Hidenobu Murata2, Naoomi Yamada1 (1. Chubu Univ. (Japan), 2. Japan Fine Ceramics Center (Japan))

[G4-P202-19]Influence of Transition Metal Doping and Post-Treatment on TiO2 Electrical Conductivity

*Loreta Abricka1, Raivis Eglitis1, Andris Šutka1 (1. Riga Technical Univ. (Latvia))

[G4-P202-20]Study on photo-response for visible light using titanium oxy-nitride films fabricated by plasma assisted deposition

*Takahisa ICHINOHE1, Hideki Ohno1, Seiichi Sato2 (1. National Institute of Technology, Tokyo College (Japan), 2. Graduate School of Science, University of Hyogo (Japan))

[G4-P202-21]Internal Stress of GaN thin films deposited by reactive HiPIMS

*Koki Karikomi1, Koo Bando2, Mirei Tokiwa2, Yoshihiro Ueoka2, Tetsuhide Shimizu1 (1. Tokyo Metropolitan Univ. (Japan), 2. Tosoh Corp. (Japan))

[G4-P202-22]Single Cathode Combinatorial Thin Film Deposition Using ZnO and Ga2O3 Powder Target by Sputtering

*Tamiko Ohshima1, Gaku Yazaki1, Satoshi Takeichi2, Yusuke Hibino2, Takeshi Ihara2, Takahiko Satake2, Hiroharu Kawasaki2, Masaaki Yamazato3, Akihiro Ikeda4, Shin-ichi Aoqui4 (1. Nagasaki Univ. (Japan), 2. National Institute of Technology, Sasebo College (Japan), 3. Univ. of the Ryukyus (Japan), 4. Sojo Univ. (Japan))

[G4-P202-23]Crystallization of amorphous WO3 films deposited by RF sputtering

*Koki Hayashida1, Ayaka Fukuchi1, Junjun Jia2, Keiji Kaneyama1, Hiroki Minegoshi1, Tetsuaki Nishida3, Nobuto Oka1 (1. Kindai Univ. (Japan), 2. Waseda Univ. (Japan), 3. Environmental Materials Institute (Japan))

[G4-P202-24]Crystallization of amorphous Ga2O3 films deposited by RF sputtering

*Keiji Kaneyama1, Risa Nakamura1, Junjun Jia2, Koki Hayashida1, Hiroki Minegoshi1, Ayaka Fukuchi1, Tetsuaki Nishida3, Nobuto Oka1 (1. Kindai Univ. (Japan), 2. Waseda Univ. (Japan), 3. Environmental Materials Inst. (Japan))

[G4-P202-25]Sputtering deposition of Ga:ZnO films on polymer substrate

*Yasuji Yamada1, Shuhei Funaki1, Tetsuro Shibata1, Shiyu Sano1 (1. Shimane Univ. (Japan))

[G4-P202-26]Prediction of Magnetic Properties in Fe-Ni Thin Films by AI-assisted Density Functional Theory

*Hongzhi Han1, Norimichi Watanabe1, Akiyoshi Nakayama1 (1. Kanagawa University (Japan))

[G4-P202-27]Optical and structural properties of TiOxNy thin films deposited by High-Power Impulse Magnetron Sputtering (HiPIMS)

*Minseok Kim1, Yuta Asano1, Kaisei Oku1, Masayoshi Katagiri2, Hironobu Machinaga2, Yuzo Shigesato1 (1. Aoyama Gakuin Univ. (Japan), 2. Nitto Denko Corp. (Japan))

[G4-P202-28]Electrocatalytic Properties of (B, N, or P)-doped Nanocarbon Developed for the Bifunctional Catalyst of Metal-air Battery

Ryota Imamura1, Hiroki Minegoshi1, Koki Hayashida1, Keiji Kaneyama1, Tetsuaki Nishida2, *Nobuto Oka1 (1. Kindai Univ. (Japan), 2. Environmental Materials Inst. (Japan))
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