Presentation Information
[G4-P202-24]Crystallization of amorphous Ga2O3 films deposited by RF sputtering
*Keiji Kaneyama1, Risa Nakamura1, Junjun Jia2, Koki Hayashida1, Hiroki Minegoshi1, Ayaka Fukuchi1, Tetsuaki Nishida3, Nobuto Oka1 (1. Kindai Univ. (Japan), 2. Waseda Univ. (Japan), 3. Environmental Materials Inst. (Japan))
Keywords:
RF sputtering,crystallization mechanism,gallium oxide