[G4-O102] Oral 102 | Materials Research Meeting 2025 (MRM2025)

Session Details

Oral SessionG. Advanced Materials and Emerging Technologies for Device Development : [G-4] Inorganic Thin Films for Sustainable Applications: From Material Design to Devices

[G4-O102]Oral 102

Tue. Dec 9, 2025 2:00 PM - 3:45 PM JST
Tue. Dec 9, 2025 5:00 AM - 6:45 AM UTC

Session 2(G301)

Chair:Hiroshi Yanagi(University of Yamanashi), Nobuto Oka(Kindai University, Japan)

2:00 PM - 2:30 PM JST(5:00 AM - 5:30 AM UTC)

[G4-O102-01]Atomically Engineered Oxide Semiconductors via ALD for Emerging Thin-Film Electronics

*Jin-Seong Park¹ (1. Hanyang University (Korea))

2:30 PM - 3:00 PM JST(5:30 AM - 6:00 AM UTC)

[G4-O102-02]The Impact of Highly Ionized Metal Flux in HiPIMS- Towards the Low Temperature Growth of Functional Nitrides -

*Tetsuhide Shimizu¹ (1. Tokyo Metropolitan Univ. (Japan))

3:00 PM - 3:30 PM JST(6:00 AM - 6:30 AM UTC)

[G4-O102-03]Epitaxial synthesis of Bismuth-based mixed anion compounds via atmospheric solution routes

*Daichi Oka¹, Zaichun Sun², Zhengkang Peng³, Yasushi Hirose¹, Tomoteru Fukumura³ (1. Tokyo Metropolitan Univ. (Japan), 2. Wuhan Univ. of Tech. (China), 3. Tohoku Univ. (Japan))

3:30 PM - 3:45 PM JST(6:30 AM - 6:45 AM UTC)

[G4-O102-04]Preparation of metallic B-doped amorphous carbon films

*Yuji Muraoka¹, Subaru Nakashima², Sho Enomoto², Takanori Wakita³, Takayoshi Yokoya¹, Kohei Yamagami⁴ (1. Okayama Univ., RIIS (Japan), 2. Okayama Univ., ELST (Japan), 3. JASRI, Miyagi (Japan), 4. JASRI, Hyogo (Japan))

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