Session Details
[G4-O301]Oral 301
Thu. Dec 11, 2025 10:00 AM - 12:00 PM JST
Thu. Dec 11, 2025 1:00 AM - 3:00 AM UTC
Thu. Dec 11, 2025 1:00 AM - 3:00 AM UTC
Session 2(G301)
Chair:Issei Suzuki(Tohoku University), Naoomi Yamada(Chubu University)
[G4-O301-01]Epitaxial Growth of Single-Crystal Boron Nitride Thin Film
*Xuedong Bai1 (1. Institute of Physics, Chinese Academy of Sciences (China))
[G4-O301-02]Electronic States, Excitation Spectroscopy and Transport Properties in Layered and 2D Semiconductors
*Shang-Peng Gao1 (1. Fudan University (China))
[G4-O301-03]Novel Low-Temperature Deposition of Diverse Sulfides via Sulfur Plasma
*Issei Suzuki1 (1. Tohoku Univ. (Japan))
[G4-O301-04]Interfacial Tuning of Vertically Layered van der Waals Materials for Thermal Management and Osmotic Energy Conversion
*Wenyu Yuan1 (1. Shaanxi Normal Univ. (China))
[G4-O301-05]Hysteresis in 2D Metal Halide Perovskite Devices: Layer- Dependent Switching Behavior Beyond Ion Migration
*Mustafa Mahmoud Ibrahim Aboulsaad1, Rajesh Kumar Rajagopal2, Tomas Edvinsson1 (1. Uppsala Univ. (Sweden), 2. CNRS GREYC Lab. (France))
