[ThD1] Hybrid Integration II and Advanced Materials

9:45 AM - 10:00 AM JST(12:45 AM - 1:00 AM UTC)

[ThD1-3] Mitigating TPA-induced instability in Ⅲ-Ⅴ/Si hybrid laser via reverse-biased PIN junctions

○Yihao Fan¹, Yuyao Guo^1,2, Xinhang Li¹, Siyu E¹, Weihan Xu¹, Minhui Jin¹, Liangjun Lu^1,2, Yu Li^1,2, Jianping Chen^1,2, Linjie Zhou^1,2 (1. State Key Laboratory of Photonics and Communications, Department of Electronic Engineering, Shanghai Jiao Tong university (China), 2. SJTU-Pinghu Institute of Intelligent Optoelectronics (China))

Keywords:

Semiconductor lasers,photonic integration

We demonstrate a III-V/Si external cavity laser incorporating PIN junctions within silicon microring resonators. By sweeping the TPA-induced carriers using reverse PIN junction, the laser exhibits superior performance compared with its unbiased counterpart.