Session Details
[ThD1]Hybrid Integration II and Advanced Materials
Thu. Jul 3, 2025 9:00 AM - 11:00 AM JST
Thu. Jul 3, 2025 12:00 AM - 2:00 AM UTC
Thu. Jul 3, 2025 12:00 AM - 2:00 AM UTC
Room D (1F 107+108)
[ThD1-1]Microtransfer Printing Enabled Advanced Photonics Integration
○Brian Corbett1,2, James O'Callaghan1,2, Owen Moynihan1,2, Fatih Blige Atar1,2, Samir Ghosh1,2 (1. University College Cork (Ireland), 2. Tyndall National Institute (Ireland))
[ThD1-2]O-band GaAs Quantum Dot Optical Amplifier Integrated on an Advanced SiN Platform
○Dongbo Wang1, Lam Thi Ngoc Tran1, Jose Carreira2, Camiel Op de Beeck2, Stijn Cuyvers2, Michael Geiselmann2, Stijn Poelman1, Tom Reep1, Jing Zhang1, Gunther Roelkens1, Bart Kuyken1 (1. Ghent University (Belgium), 2. LIGENTEC SA (Switzerland))
[ThD1-3]Mitigating TPA-induced instability in Ⅲ-Ⅴ/Si hybrid laser via reverse-biased PIN junctions
○Yihao Fan1, Yuyao Guo1,2, Xinhang Li1, Siyu E1, Weihan Xu1, Minhui Jin1, Liangjun Lu1,2, Yu Li1,2, Jianping Chen1,2, Linjie Zhou1,2 (1. State Key Laboratory of Photonics and Communications, Department of Electronic Engineering, Shanghai Jiao Tong university (China), 2. SJTU-Pinghu Institute of Intelligent Optoelectronics (China))
[ThD1-4]Various Types of Hybrid SOAs using InP/SOI Chip-on-wafer Bonding Technology Towards Large Scale Photonic Integrated Circuits
○Takehiko Kikuchi1,2,3, Hidenari Fujikata1,2, Kento Komatsu1,2,3, Naoko Inoue1,2,3, Naoki Fujiwara1,2,3, Takuo Hiratani1,2,3, Takuya Mitarai1,2,3, Takuya Okimoto1,2,3, Yuji Koyama1,2, Yuhki Itoh1,2, Ryuya Sasaki3, Tsukuru Katsuyama3, Nobuhiko Nishiyama1,3, Hideki Yagi1,2,3 (1. Photonics Electronics Technology Research Association (PETRA) (Japan), 2. Transmission Devices Laboratory, Sumitomo Electric Industries, Ltd. (Japan), 3. Dept. of Electrical and Electronic Engineering, Institute of Science Tokyo (Japan))
[ThD1-5]High-density MDM silicon transmitter based on two-dimensional grating coupler for single-fiber 4×80-Gbps signaling
○xinyi Wang1, jiangbing Du1, wenjia Zhang1, weihong Shen2, ke Xu3, zuyuan He1 (1. Shanghai Jiao Tong University (China), 2. University of Shanghai for Science and Technology (China), 3. Harbin Institute of Technology (Shenzhen) (China))
[ThD1-6]Investigation of Layers and Quantum Wells of GaAsBi with Embedded Bi Quantum Dots for Applications in NIR LEDs
○Renata Butkute1, Aivaras Špokas1, Andrea Zelioli1, Augustas Vaitkevičius1, Andrius Bičiūnas1, Evelina Dudutiene1, Bronislovas Čechavičius1, Martynas Skapas1, Aurimas Čerškus1 (1. State Research Institute Center for Physical Sciences and Technology (Lithuania))
[ThD1-7]Unsupervised Machine Learning Study of GaAsBi Quantum Well Evolution After Annealing Based on Spatially Resolved micro-Photoluminescence Imaging.
○Lena N. Golubewa1,2, Yaraslau Padrez1, Aivaras Špokas1,3, Andrea Zelioli1, Aiste Štaupiene1,3, Bronislovas Čechavičius1, Evelina Dudutiene1, Augustas Vaitkevičius1,3, Renata Butkute1,3 (1. State research institute Center for Physical Sciences and Technology (Lithuania), 2. Institute of Chemical Physics, Vilnius University (Lithuania), 3. Institute of Photonics and Nanotechnology, Vilnius University (Lithuania))