Presentation Information
[ThD1-4]Various Types of Hybrid SOAs Using InP/SOI Chip-on-wafer Bonding Technology Towards Large Scale Photonic Integrated Circuits
○Takehiko Kikuchi1,2,3, Hidenari Fujikata1,2, Kento Komatsu1,2,3, Naoko Inoue1,2,3, Naoki Fujiwara1,2,3, Takuo Hiratani1,2,3, Takuya Mitarai1,2,3, Takuya Okimoto1,2,3, Yuji Koyama1,2, Yuhki Itoh1,2, Ryuya Sasaki3, Tsukuru Katsuyama3, Nobuhiko Nishiyama1,3, Hideki Yagi1,2,3 (1Photonics Electronics Technology Research Association, 2Sumitomo Electric Industries, Ltd., 3Institute of Science Tokyo)
Keywords:
Si photonic and heterogeneous platform
III-V/Si hybrid SOAs with different epitaxial structures are monolithically integrated on an SOI wafer, using chip-on-wafer direct bonding process. The control of gain characteristics through the design of the optical confinement to the active layer in the III-V/Si hybrid structure is demonstrated.