[ThD1] Hybrid Integration II and Advanced Materials

10:00 AM - 10:15 AM JST(1:00 AM - 1:15 AM UTC)

[ThD1-4] Various Types of Hybrid SOAs using InP/SOI Chip-on-wafer Bonding Technology Towards Large Scale Photonic Integrated Circuits

○Takehiko Kikuchi^1,2,3, Hidenari Fujikata^1,2, Kento Komatsu^1,2,3, Naoko Inoue^1,2,3, Naoki Fujiwara^1,2,3, Takuo Hiratani^1,2,3, Takuya Mitarai^1,2,3, Takuya Okimoto^1,2,3, Yuji Koyama^1,2, Yuhki Itoh^1,2, Ryuya Sasaki³, Tsukuru Katsuyama³, Nobuhiko Nishiyama^1,3, Hideki Yagi^1,2,3 (1. Photonics Electronics Technology Research Association (PETRA) (Japan), 2. Transmission Devices Laboratory, Sumitomo Electric Industries, Ltd. (Japan), 3. Dept. of Electrical and Electronic Engineering, Institute of Science Tokyo (Japan))

Keywords:

Si photonic and heterogeneous platform

III-V/Si hybrid SOAs with different epitaxial structures are monolithically integrated on an SOI wafer, using chip-on-wafer direct bonding process. The control of gain characteristics through the design of the optical confinement to the active layer in the III-V/Si hybrid structure is demonstrated.