[ThD1] Hybrid Integration II and Advanced Materials

10:30 AM - 10:45 AM JST(1:30 AM - 1:45 AM UTC)

[ThD1-6] Investigation of Layers and Quantum Wells of GaAsBi with Embedded Bi Quantum Dots for Applications in NIR LEDs

○Renata Butkute¹, Aivaras Špokas¹, Andrea Zelioli¹, Augustas Vaitkevičius¹, Andrius Bičiūnas¹, Evelina Dudutiene¹, Bronislovas Čechavičius¹, Martynas Skapas¹, Aurimas Čerškus¹ (1. State Research Institute Center for Physical Sciences and Technology (Lithuania))

Keywords:

Quantum well,quantum dot,and nano-structured photonic devices,Semiconductor lasers,optical amplifiers,and light emitting diodes,Si/Ge,polymer,and novel III-V based active devices

This work is focused to the investigation of LED containing GaAsBi quantum dots embedded in a layer or parabolic quantum well formed in-situ in MBE reactor using segregation process as an alternative method.