Presentation Information
[ThD1-6]Investigation of Layers and Quantum Wells of GaAsBi with Embedded Bi Quantum Dots for Applications in NIR LEDs
○Renata Butkute1, Aivaras Špokas1, Andrea Zelioli1, Augustas Vaitkevičius1, Andrius Bičiūnas1, Evelina Dudutiene1, Bronislovas Čechavičius1, Martynas Skapas1, Aurimas Čerškus1 (1.State Research Institute Center for Physical Sciences and Technology)
Keywords:
Quantum well,quantum dot,and nano-structured photonic devices,Semiconductor lasers,optical amplifiers,and light emitting diodes,Si/Ge,polymer,and novel III-V based active devices
This work is focused to the investigation of LED containing GaAsBi quantum dots embedded in a layer or parabolic quantum well formed in-situ in MBE reactor using segregation process as an alternative method.