Presentation Information
[ThD1-6]Investigation of Layers and Quantum Wells of GaAsBi with Embedded Bi Quantum Dots for Applications in NIR LEDs
Aivaras Špokas, Andrea Zelioli, Augustas Vaitkevičius, Andrius Bičiūnas, Evelina Dudutiene, Bronislovas Čechavičius, Martynas Skapas, Aurimas Čerškus, ○Renata Butkute (State Research Institute Center for Physical Sciences and Technology)
Keywords:
Quantum well,quantum dot,and nano-structured photonic devices,Semiconductor lasers,optical amplifiers,and light emitting diodes,Si/Ge,polymer,and novel III-V based active devices
This work is focused to the investigation of LED containing GaAsBi quantum dots embedded in a layer or parabolic quantum well formed in-situ in MBE reactor using segregation process as an alternative method.