[WE3] High-Speed Modulators II

3:15 PM - 3:30 PM JST(6:15 AM - 6:30 AM UTC)

[WE3-3] Thermal Analysis for Germanium-Silicon Quantum Confined Stark Effect Electro-Absorption Modulators

○Ahmed Kandeel^1,2, Artemisia Tsiara², Hakim Kobbi², Amir Shahin^1,2, Conor Coughlan ², Javad Rahimi Vaskasi², Yosuke Shimura², Maumita Chakrabarti², Dimitrios Velenis², Filippo Ferraro², Yoojin Ban², Dries Van Thourhout^1,2, Joris Van Campenhout² (1. Photonics Research Group, Department of Information Technology, Ghent University-imec (Belgium), 2. IMEC (Belgium))

Keywords:

Optical modulators,Quantum well,Si/Ge,Photonic integrated circuits

We present an initial thermal study for O-band GeSi quantum confined stark effect electro-absorption modulator on a 300 mm Si photonics platform. High temperature insertion loss, extinction ratio and dark current are presented.