Session Details
[WE3]High-Speed Modulators II
Wed. Jul 2, 2025 2:00 PM - 4:00 PM JST
Wed. Jul 2, 2025 5:00 AM - 7:00 AM UTC
Wed. Jul 2, 2025 5:00 AM - 7:00 AM UTC
Room E (2F Small Hall)
[WE3-1]High-Speed Modulator Technology: Material and Design Evolution (InP, Si, TF-LN)
○Suguru Akiyama
[WE3-2]Comparison of High-Speed Performance between InP-Based Coplanar Strip-Line and Capacitive-Loading Mach-Zehnder Modulators
○Ruoyun Yao1, Weiwei Pan1, Yu Cheng1, Min Gong1, Jintian Zhu2, Chen Ji1 (1. Zhejiang University (China), 2. G-TRON Semiconductor Co., Ltd. (China))
[WE3-3]Thermal Analysis for Germanium-Silicon Quantum Confined Stark Effect Electro-Absorption Modulators
○Ahmed Kandeel1,2, Artemisia Tsiara2, Hakim Kobbi2, Amir Shahin1,2, Conor Coughlan 2, Javad Rahimi Vaskasi2, Yosuke Shimura2, Maumita Chakrabarti2, Dimitrios Velenis2, Filippo Ferraro2, Yoojin Ban2, Dries Van Thourhout1,2, Joris Van Campenhout2 (1. Photonics Research Group, Department of Information Technology, Ghent University-imec (Belgium), 2. IMEC (Belgium))
[WE3-4]InP/Si heterogeneously integrated p-i-n type Mach-Zehnder modulator by utilizing chip-on-wafer bonding method
○Hajime Tanaka1,2,3, Naotaka Kasuya1,2,3, Taichi Misawa2, Kento Komatsu1,2,3, Naoko Inoue1,2,3, Takehiko Kikuchi1,2,3, Takuya Mitarai1,2,3, Shun Kimura2, Naoki Fujiwara1,2,3, Nobuhiko Nishiyama1,3, Hideki Yagi1,2,3 (1. PETRA (Japan), 2. Sumitomo Electric Industries, Ltd. (Japan), 3. Institute of Science Tokyo (Japan))
[WE3-5]High-speed Silicon-Organic Hybrid Modulators with Ladder-Slot Waveguides
○Shunsuke Abe1, Atsushi Seki1, Hirokazu Sanpei2, Toshiki Yamada3, Takahiro Kaji3, Akira Otomo3, Hideo Hara1, Shin Masuda1 (1. Advantest laboratories Ltd. (Japan), 2. Advantest Component, Inc. (Japan), 3. National Institute of Information and Communications Technology (Japan))