[WE3] High-Speed Modulators II

3:30 PM - 3:45 PM JST(6:30 AM - 6:45 AM UTC)

[WE3-4] InP/Si heterogeneously integrated p-i-n type Mach-Zehnder modulator by utilizing chip-on-wafer bonding method

○Hajime Tanaka^1,2,3, Naotaka Kasuya^1,2,3, Taichi Misawa², Kento Komatsu^1,2,3, Naoko Inoue^1,2,3, Takehiko Kikuchi^1,2,3, Takuya Mitarai^1,2,3, Shun Kimura², Naoki Fujiwara^1,2,3, Nobuhiko Nishiyama^1,3, Hideki Yagi^1,2,3 (1. PETRA (Japan), 2. Sumitomo Electric Industries, Ltd. (Japan), 3. Institute of Science Tokyo (Japan))

Keywords:

InP,Silicon photonics,III-V/Si,Optical modulators,Chip-on-wafer bonding

We demonstrate an InP/Si heterogeneously integrated p-i-n type Mach-Zehnder modulator by using chip-on-wafer bonding method. The phase modulation efficiency is lower than 1.0 Vπcm. The electrical/optical 3 dB bandwidth is as high as 67.5 GHz.