[WG2] Hybrid Integration I

11:30 AM - 11:45 AM JST(2:30 AM - 2:45 AM UTC)

[WG2-2] EML Assembled with Flip-Chip Technology on AlN Sub-mount Operating at 212.5 Gbps PAM4

○Kei Masuyama¹, Mizuki Shirao¹, Asami Uchiyama¹, Takuma Fujta¹, Yutaka Yoneda¹, Kenichi Abe¹, Chikara Watatani¹, Shunto Katsumi¹, Nobuo Ohata¹ (1.Mitsubishi Electric Corporation)

Keywords:

Optical modulators,Packaging technology of photonic devices and circuits

We reported a high-performance EML integrated using flip-chip technology on an AlN submount. It is capable of high-speed modulation, demonstrating 3dB bandwidth at 66.4 GHz and low TDECQ values of 1.8 dB for 106 GBaud-PAM4.