[WG2] Hybrid Integration I

11:45 AM - 12:00 PM JST(2:45 AM - 3:00 AM UTC)

[WG2-3] Mass-Production-friendly Design and Manufacturing for 100-Gb/s-PAM4-EML Using Single Butt-Joint Regrowth of InGaAsP-MQWs and optimized AR coating

○K H Huang¹, Jian Fang¹, Ming Yu¹, Chen Gao¹, Yanghuo Zhang¹, Cedric Gao¹, Kaifeng Yang¹, Bill Liu¹, Weizhong Sun¹ (1.Zetta Semiconductor Co., Ltd.)

Keywords:

Semiconductor lasers,optical amplifiers,and light emitting diodes

We developed mass-production-friendly 100-Gb/s-PAM4-EMLs with a ridge waveguide structure, single butt-joint InGaAsP-MQW regrowth, and optimized AR coating, achieving 54 GHz bandwidth and TDECQ below 3.0 dB across 20–70 °C.