[Th1c-O42] Sub area 4-2: Doping and heterointerfaces for high efficiency

9:30 AM - 9:45 AM JST(12:30 AM - 12:45 AM UTC)

[Th1c-O42-03] Exploring grain- and grain boundary-specific oxidation, post-deposition treatment, and buffer layer deposition in Cu(In,Ga)Se₂ absorbers

*Muhammad Uzair Farooq¹, Christian Kaufmann², Alex Redinger³ (1. University of Luxembourg (Luxembourg), 2. Helmholtz-Zentrum Berlin (Germany), 3. University of Luxembourg (Luxembourg))