[Th1c-O42] Sub area 4-2: Doping and heterointerfaces for high efficiency

9:45 AM - 10:00 AM JST(12:45 AM - 1:00 AM UTC)

[Th1c-O42-04] Extended structural defects and Na doping in epitaxially grown Cu(In,Ga)Se₂ solar cells

*Daniel Abou-Ras¹, Jiro Nishinaga², Takeyoshi Sugaya², Ulrike Bloeck¹, René Schwiddessen¹, Sinju Thomas¹, Dan R. Wargulski¹, Sebastian Weitz¹, Harvey Guthrey³, Pat Trimby⁴, Aimo Winkelmann⁵, Ava Karami^6,7, Oana Cojocaru-Mirédin⁷, Delwin Perera⁸, Vasilios Karanikolas⁸, Karsten Albe⁸, Shogo Ishizuka² (1. Helmholtz-Zentrum Berlin (Germany), 2. National Institute of Advanced Industrial Science and Technology (Japan), 3. National Renewable Energy Laboratory (United States of America), 4. Oxford Instruments Nanoanalysis (UK), 5. ST Development GmbH (Germany), 6. RWTH Aachen (Germany), 7. Albert-Ludwigs Universität Freiburg (Germany), 8. TU Darmstadt (Germany))