Presentation Information
[Th3-P21-15]InGaP power converter module under high-power 638 nm laser irradiation of 5W
*Ryusei Takahashi1, Junichi Suzuki1, Gin Hirano1, Reo Aoyama1, Moeka Chiba1, Kosuke Watanabe1, Shunsuke Shibui1, Masahiro Koga1, Yuta Nishidate1, Masaki Ayukawa2, Masaki Maeda2, Kazuyuki Iizuka2, Toshihiko Fukamachi2, Kouichi Akahane3, Shiro Uchida1 (1. Chiba Institute of Technology (Japan), 2. Ushio Inc. (Japan), 3. National Institute of Information and Communications Technology (Japan))